Pattern formation material and pattern formation method

ABSTRACT

A pattern formation material contains a base polymer including a siloxane compound represented by Chemical Formula 1:  
     Chemical Formula 1:  
                 
 
     wherein R 1  are the same or different compounds selected from the group consisting of an alkyl compound, an ester compound, an ether compound, a sulfone compound, a sulfonyl compound and an aromatic compound.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to method and material for forminga pattern, and more particularly, it relates to a method for forming aresist pattern, used for forming a semiconductor device or asemiconductor integrated circuit on a semiconductor substrate, by usingexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band and a pattern formation material used in the method.

[0002] Currently, in fabrication of a mass storage semiconductorintegrated circuit, such as a 64 Mbit dynamic random access memory (RAM)and a logic device or a system LSI with a 0.25 μm through 0.15 μm rule,a resist pattern is formed by using a chemically amplified resistmaterial including a polyhydroxystyrene derivative and an acid generatoras principal constituents with KrF excimer laser (of a wavelength of a248 nm band) used as exposing light.

[0003] Moreover, for fabrication of a 256 Mbit DRAM, a 1 Gbit DRAM or asystem LSI with a 0.15 μm through 0.13 μm rule, a pattern formationmethod using, as exposing light, ArF excimer laser lasing at a shorterwavelength (of a 193 nm band) than the KrF excimer laser is now underdevelopment.

[0004] The chemically amplified resist material including apolyhydroxystyrene derivative as a principal constituent has highabsorbance against light of a wavelength of a 193 nm band because of anaromatic ring included therein. Therefore, exposing light of awavelength of a 193 nm band cannot uniformly reach the bottom of aresist film, and hence, a pattern cannot be formed in a good shape.Accordingly, the chemically amplified resist material including apolyhydroxystyrene derivative as a principal constituent cannot be usedwhen the ArF excimer laser is used as the exposing light.

[0005] Therefore, a chemically amplified resist material including, as aprincipal constituent, a polyacrylic acid derivative or apolycycloolefin derivative having no aromatic ring is used when the ArFexcimer laser is used as the exposing light.

[0006] On the other hand, as exposing light for a pattern formationmethod capable of coping with high resolution, X rays, an electron beam(EB) and the like are being examined.

[0007] When the X rays are used as the exposing light, however, thereare a large number of problems in the exposure system and preparation ofa mask. Also, when the EB is used as the exposing light, the throughputis disadvantageously low, and hence, the EB is not suitable to massproduction. Thus, neither the X rays nor the EB is preferred as theexposing light.

[0008] Accordingly, in order to form a resist pattern finer than 0.10μm, it is necessary to use exposing light of a wavelength shorter thanthat of the ArF excimer laser, such as Xe₂ laser (of a wavelength of a172 nm band), F₂ laser (of a wavelength of a 157 nm band), Kr₂ laser (ofa wavelength of a 146 nm band), ArKr laser (of a wavelength of 134 nmband), Ar₂ laser (of a wavelength of a 126 nm band) and soft-X rays (ofa wavelength of a 13, 11 or 5 nm band). In other words, a resist patternis required to be formed by using exposing light of a wavelength of a 1nm through 30 nm band or a 110 nm through 180 nm band.

[0009] Therefore, the present inventors have formed resist patterns byconducting pattern exposure using F₂ laser (of a wavelength of a 157 nmband) on resist films formed from conventionally known chemicallyamplified resist materials respectively including a polyhydroxystyrenederivative represented by Chemical Formula A, a polyacrylic acidderivative represented by Chemical Formula B and a polycycloolefinderivative represented by Chemical Formula C.

[0010] However, none of the resist patterns can be formed in arectangular cross-sectional shape, and much scum remains on thesemiconductor substrates. Such problems occur not only in using the F₂laser as the exposing light but also in using another light of awavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band.

[0011] Accordingly, a resist pattern cannot be practically formed byirradiating a resist film formed from a conventional chemicallyamplified resist material including a polyhydroxystyrene derivative, apolyacrylic acid derivative or a polycycloolefin derivative with lightof a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nmband.

SUMMARY OF THE INVENTION

[0012] In consideration of the aforementioned conventional problems, anobject of the invention is forming a resist pattern in a good patternshape with minimally producing scum by using exposing light of awavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band.

[0013] The present inventors have studied the causes of the conventionalproblems occurring in using a conventional resist material, such as aresist material including a polyhydroxystyrene derivative as a principalconstituent, and have found the following:

[0014] First, the resist material including a polyhydroxystyrenederivative has high absorbance against light of a wavelength of a 1 nmthrough 180 nm band. For example, a resist film with a thickness of 100nm formed from the resist material has transmittance of 20% at mostagainst a F₂ laser beam (of a wavelength of a 157 nm band).

[0015] Therefore, various examination has been made on means forimproving the transmittance of a resist material against light of awavelength of a 1 nm through 180 nm band. As a result, the transmittanceof a resist film against light of a wavelength of a 1 nm through 180 nmband can be improved when a novel siloxane skeleton having a stericstructure is introduced into a base polymer of the resist material ascompared with the case where a linear or ladder siloxane skeleton isintroduced.

[0016] Also, it has been found that when a siloxane skeleton having asteric structure is introduced into the base polymer, the refractorinessof an unexposed portion of the resist film in a developer can beimproved.

[0017] Moreover, it has been found that when a siloxane skeleton havinga steric structure is introduced into the base polymer, the dry etchingresistance and the heat resistance of the resist film can be improved.

[0018] The present invention was devised on the basis of theaforementioned findings, and specifically, the invention provides thefollowing pattern formation material and pattern formation methods.

[0019] The pattern formation material of this invention comprises a basepolymer including a siloxane compound represented by Chemical Formula 1:

[0020] wherein R₁ are the same or different compounds selected from thegroup consisting of an alkyl compound, an ester compound, an ethercompound, a sulfone compound, a sulfonyl compound and an aromaticcompound.

[0021] In the pattern formation material of this invention, the siloxanecompound represented by Chemical Formula 1 has a siloxane skeleton witha steric structure. Therefore, the absorbance against light of awavelength of a 1 nm through 180 nm band can be lowered as compared withthat of a siloxane compound having a linear or ladder siloxane skeleton.Accordingly, the transmittance against light of a wavelength of a 1 nmthrough 180 nm band of the base polymer can be improved. As a result,when pattern exposure is carried out on a resist film formed from thepattern formation material of this invention by using exposing light ofa wavelength of a 1 nm through 180 nm band, a resist pattern can beformed in a rectangular cross-sectional shape.

[0022] Furthermore, when a siloxane skeleton with a steric structure isintroduced into the base polymer, the refractoriness of an unexposedportion of the resist film in a developer can be improved withoutchanging solubility of an exposed portion in the developer. Therefore,no scum is produced on the substrate as well as the resolution (thecontrast between the exposed portion and the unexposed portion) of theresist film can be improved.

[0023] Moreover, when a siloxane skeleton with a steric structure isintroduced into the base polymer, the dry etching resistance and theheat resistance of the resist film can be also improved.

[0024] Preferably, the pattern formation material further comprises anacid generator for generating an acid through irradiation with light,and at least one R₁ of Chemical Formula 1 is an alkyl compoundrepresented by Chemical Formula 2:

[0025] wherein R₂ is a protecting group released by an acid.

[0026] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0027] Preferably, the pattern formation material further comprises anacid generator for generating an acid through irradiation with light,and at least one R₁ of Chemical Formula 1 is an alkyl compoundrepresented by Chemical Formula 3:

[0028] wherein R₃ are the same or different protecting groups releasedby an acid.

[0029] Preferably, the pattern formation material further comprises anacid generator for generating an acid through irradiation with light,and at least one R₁ of Chemical Formula 1 is an ether compoundrepresented by Chemical Formula 4:

[0030] wherein R₄ is a protecting group released by an acid.

[0031] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0032] Preferably, the pattern formation material further comprises anacid generator for generating an acid through irradiation with light,and at least one R₁ of Chemical Formula 1 is an ether compoundrepresented by Chemical Formula 5:

[0033] wherein R₅ is a protecting group released by an acid.

[0034] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0035] The first pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, apattern formation material containing a base polymer including asiloxane compound represented by Chemical Formula 6:

[0036] wherein R₁ are the same or different compounds selected from thegroup consisting of an alkyl compound, an ester compound, an ethercompound, a sulfone compound, a sulfonyl compound and an aromaticcompound; irradiating the resist film with exposing light of awavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm bandfor pattern exposure; and forming a resist pattern by developing theresist film after the pattern exposure.

[0037] In the first pattern formation method, since the siloxanecompound represented by Chemical Formula 6 has a siloxane skeleton witha steric structure, the absorbance against light with a wavelength of a1 nm through 30 nm band or a 110 nm through 180 nm band can be loweredas compared with that of a siloxane compound with a linear or laddersiloxane skeleton. Therefore, the transmittance against light of a 1 nmthrough 30 nm band or a 110 nm through 180 nm band of the resist filmcan be improved, resulting in forming a resist pattern in a rectangularcross-sectional shape.

[0038] Furthermore, scum is not produced on the substrate during theformation of the resist pattern and the resolution of the resist filmcan be improved. Therefore, the resist pattern can be formed in a goodpattern shape.

[0039] Moreover, the dry etching resistance and the heat resistance ofthe resist film can be improved.

[0040] In the first pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 6 is preferably an alkyl compound represented by ChemicalFormula 7:

[0041] wherein R₂ is a protecting group released by an acid.

[0042] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0043] In the first pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 6 is preferably an alkyl compound represented by ChemicalFormula 8:

[0044] wherein R₃ are the same or different protecting groups releasedby an acid.

[0045] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0046] In the first pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 6 is preferably an ether compound represented by ChemicalFormula 9:

[0047] wherein R₄ is a protecting group released by an acid.

[0048] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0049] In the first pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 6 is preferably an ether compound represented by ChemicalFormula 10:

[0050] wherein R₅ is a protecting group released by an acid.

[0051] Thus, a chemically amplified resist film with high resolution,high dry etching resistance and high heat resistance can be formed in agood pattern shape without producing scum.

[0052] The second pattern formation method of this invention comprisesthe steps of forming an organic film from an organic compound on asubstrate; forming a resist film by applying, on the organic film, apattern formation material containing a base polymer including asiloxane compound represented by Chemical Formula 11:

[0053] wherein R₁ are the same or different compounds selected from thegroup consisting of an alkyl compound, an ester compound, an ethercompound, a sulfone compound, a sulfonyl compound and an aromaticcompound; irradiating the resist film with exposing light of awavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm bandfor pattern exposure; forming a resist pattern by developing the resistfilm after the pattern exposure; and forming an organic film pattern byconducing dry development using oxygen plasma on the organic film withthe resist pattern used as a mask.

[0054] In the second pattern formation method, since the siloxanecompound represented by Chemical Formula 11 has a siloxane skeleton witha steric structure, the absorbance against light of a wavelength of a 1nm through 30 nm band or a 110 nm through 180 nm band can be lowered ascompared with that of a siloxane compound with a linear or laddersiloxane skeleton. Therefore, the transmittance against light of awavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm bandof the resist film can be improved. As a result, a mask patternincluding the resist pattern and the organic film pattern can be formedin a rectangular cross-sectional shape.

[0055] Furthermore, no scum is produced on the organic film during theformation of the resist pattern as well as the resolution, the dryetching resistance and the heat resistance of the resist film can beimproved, resulting in forming a mask pattern with a good pattern shape.

[0056] In the second pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 11 is preferably an alkyl compound represented by ChemicalFormula 12:

[0057] wherein R₂ is a protecting group released by an acid.

[0058] In the second pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 11 is preferably an alkyl compound represented by ChemicalFormula 13:

[0059] wherein R₃ are the same or different protecting groups releasedby an acid.

[0060] In the second pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 11 is preferably an ether compound represented by ChemicalFormula 14:

[0061] wherein R₄ is a protecting group released by an acid.

[0062] In the second pattern formation method, the pattern formationmaterial preferably further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 11 is preferably an ether compound represented by ChemicalFormula 15:

[0063] wherein R₅ is a protecting group released by an acid.

[0064] In the first or second pattern formation method, the exposinglight is preferably F₂ excimer laser, Ar₂ excimer laser or soft-X rays.

BRIEF DESCRIPTION OF THE DRAWINGS

[0065]FIGS. 1A, 1B, 1C and 1D are cross-sectional views for showingprocedures in a pattern formation method according to any of Embodiments1 through 8 of the invention;

[0066]FIGS. 2A, 2B and 2C are cross-sectional views for showingprocedures in a pattern formation method according to Embodiment 9 ofthe invention; and

[0067]FIGS. 3A and 3B are cross-sectional views for showing otherprocedures in the pattern formation method of Embodiment 9.

DETAILED DESCRIPTION OF THE INVENTION

[0068] Embodiment 1

[0069] A pattern formation material and a pattern formation methodaccording to Embodiment 1 of the invention will now be described withreference to FIGS. 1A through 1D.

[0070] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is an alkyl compound represented by ChemicalFormula 2 (wherein R₂ is a protecting group released by an acid), andspecifically has the following composition:

[0071] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is an alkyl compound represented by ChemicalFormula 16 below

[0072] Acid generator: triphenylsulfonium triflate

[0073] First, as is shown in FIG. 1A, the resist material having theaforementioned composition is applied on a semiconductor substrate 10 byspin coating, so as to form a resist film 11 with a thickness of 0.2 μm.At this point, since the base polymer is alkali-refractory, the resistfilm 11 is alkali-refractory.

[0074] Next, as is shown in FIG. 1B, the resist film 11 is irradiatedthrough a mask 12 with a F₂ excimer laser beam 13 (of a wavelength of a157 nm band) for pattern exposure. Thus, the acid generator isdecomposed by the F₂ excimer laser beam 13 so as to generate an acid inan exposed portion 11 a of the resist film 11 while an unexposed portion11 b of the resist film 11 remains refractory in an alkaline developer.

[0075] Then, as is shown in FIG. 1C, the semiconductor substrate 10together with the resist film 11 is heated with a hot plate 14. Thus,the base polymer is decomposed by the acid generated from the acidgenerator in the exposed portion 11 a of the resist film 11, and hence,the exposed portion 11 a becomes soluble in an alkaline developer.

[0076] Subsequently, the resist film 11 is developed by using analkaline developer, such as a tetramethylammonium hydroxide aqueoussolution. Thus, the exposed portion 11 a of the resist film 11 isdissolved in the developer, so that a resist pattern 15 can be formedfrom the unexposed portion 11 b of the resist film 11 as is shown inFIG. 1D.

[0077] Embodiment 2

[0078] A pattern formation material and a pattern formation methodaccording to Embodiment 2 of the invention will now be described.Embodiment 2 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0079] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is an alkyl compound represented by ChemicalFormula 3 (wherein R₃ are the same or different protecting groupsreleased by an acid), and specifically has the following composition:

[0080] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is an alkyl compound represented by ChemicalFormula 17 below

[0081] Acid generator: triphenylsulfonium triflate

[0082] Embodiment 3

[0083] A pattern formation material and a pattern formation methodaccording to Embodiment 3 of the invention will now be described.Embodiment 3 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0084] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is an ether compound represented by ChemicalFormula 4 (wherein R₄ is a protecting group released by an acid), andspecifically has the following composition:

[0085] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is an ether compound represented by ChemicalFormula 18 below

[0086] Acid generator: triphenylsulfonium triflate

[0087] Embodiment 4

[0088] A pattern formation material and a pattern formation methodaccording to Embodiment 4 of the invention will now be described.Embodiment 4 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0089] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is an ether compound represented by ChemicalFormula 5 (wherein R₅ is a protecting group released by an acid), andspecifically has the following composition:

[0090] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is an ether compound represented by ChemicalFormula 19 below

[0091] Acid generator: triphenylsulfonium triflate

[0092] Embodiment 5

[0093] A pattern formation material and a pattern formation methodaccording to Embodiment 5 of the invention will now be described.Embodiment 5 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0094] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is an ester compound, and specifically hasthe following composition:

[0095] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is an ester compound represented by ChemicalFormula 20 below

[0096] Acid generator: triphenylsulfonium triflate

[0097] Embodiment 6

[0098] A pattern formation material and a pattern formation methodaccording to Embodiment 6 of the invention will now be described.Embodiment 6 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0099] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is a sulfone compound, and specifically hasthe following composition:

[0100] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is a sulfone compound represented by ChemicalFormula 21 below

[0101] Acid generator: triphenylsulfonium triflate

[0102] Embodiment 7

[0103] A pattern formation material and a pattern formation methodaccording to Embodiment 7 of the invention will now be described.Embodiment 7 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0104] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is a sulfonyl compound, and specifically hasthe following composition:

[0105] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is a sulfonyl compound represented by ChemicalFormula 22 below

[0106] Acid generator: triphenylsulfonium triflate

[0107] Embodiment 8

[0108] A pattern formation material and a pattern formation methodaccording to Embodiment 8 of the invention will now be described.Embodiment 8 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0109] The resist material of this embodiment is a chemically amplifiedresist material including a base polymer represented by Chemical Formula1 in which at least one R₁ is an aromatic compound, and specifically hasthe following composition:

[0110] Base polymer: a polymer represented by Chemical Formula 1 inwhich at least one R₁ is an aromatic compound represented by ChemicalFormula 23 below

[0111] Acid generator: triphenylsulfonium triflate

[0112] Embodiment 9

[0113] A pattern formation material and a pattern formation methodaccording to Embodiment 9 of the invention will now be described withreference to FIGS. 2A through 2C, 3A and 3B.

[0114] The resist material of Embodiment 9 is a chemically amplifiedresist material the same as that of Embodiment 1 and hence is notdescribed in detail.

[0115] First, as is shown in FIG. 2A, an organic film 21 of an organiccompound is formed on a semiconductor substrate 20, and the resistmaterial the same as that of Embodiment 1 is applied on the organic film21 by spin coating, so as to form a resist film 22 with a thickness of0.2 μm. At this point, since the base polymer of the resist material isalkali-refractory, the resist film 22 is alkali-refractory. The organiccompound may be any of a resist material, an antireflection film and aninexpensive organic material. The organic film 21 has a function toimprove dimensional controllability of a mask pattern formed from theorganic film 21 or the resist film 22 by, for example, when a filmdeposited to be etched on the semiconductor substrate 20 has a leveldifference, relaxing the level difference or by suppressing reflectionof exposing light from the film to be etched.

[0116] Next, as is shown in FIG. 2B, the resist film 22 is irradiatedthrough a mask 23 with a F₂ excimer laser beam 24 (of a wavelength of a157 nm band) for pattern exposure. Thus, the acid generator isdecomposed by the F₂ excimer laser beam 24 so as to generate an acid inan exposed portion 22 a of the resist film 22 while an unexposed portion22 b of the resist film 22 remains refractory in an alkaline developer.

[0117] Then, as is shown in FIG. 2C, the semiconductor substrate 20together with the resist film 22 is heated with a hot plate 25. Thus,the base polymer is decomposed by the acid generated from the acidgenerator in the exposed portion 22 a of the resist film 22, and hence,the exposed portion 22 b becomes soluble in an alkaline developer.

[0118] Subsequently, the resist film 22 is developed by using analkaline developer, such as a tetramethylammonium hydroxide aqueoussolution. Thus, the exposed portion 22 a of the resist film 22 isdissolved in the developer, so that a resist pattern 26 can be formedfrom the unexposed portion 22 b of the resist film 22 as is shown inFIG. 3A.

[0119] Next, the organic film 21 is subjected to plasma 27 includingoxygen with the resist pattern 26 used as a mask. Thus, since siliconincluded in the resist pattern 26 is bonded to oxygen so as to formsilicon oxide and the resist pattern 26 has resistance against oxygenplasma, the shape of the resist pattern 26 is transferred onto theorganic film 21. In other words, the organic film 21 is dry developed byusing the resist pattern 26 as a mask. Therefore, an organic filmpattern 28 is formed from the organic film 21 as is shown in FIG. 3B,resulting in forming a two-layer mask pattern consisting of the resistpattern 26 and the organic film pattern 28.

[0120] Although the two-layer mask pattern consisting of the resistpattern 26 and the organic film pattern 28 is formed in Embodiment 9 byusing the chemically amplified resist material the same as that ofEmbodiment 1, the chemically amplified resist material the same as anyof Embodiments 2 through 8 may be used instead for forming the two-layermask pattern.

[0121] Although the F₂ laser beam is used as the exposing light in anyof Embodiments 1 through 9, a Xe₂ laser beam, a Kr₂ laser beam, an ArKrlaser beam, an Ar₂ laser beam or soft-X rays may be used instead.

What is claimed is:
 1. A pattern formation material comprising a basepolymer including a siloxane compound represented by Chemical Formula 1:

wherein R₁, are the same or different compounds selected from the groupconsisting of an alkyl compound, an ester compound, an ether compound, asulfone compound, a sulfonyl compound and an aromatic compound.
 2. Thepattern formation material of claim 1, further comprising an acidgenerator for generating an acid through irradiation with light, whereinat least one R₁ of Chemical Formula 1 is an alkyl compound representedby Chemical Formula 2:

wherein R₂ is a protecting group released by an acid.
 3. The patternformation material of claim 1, further comprising an acid generator forgenerating an acid through irradiation with light, wherein at least oneR₁ of Chemical Formula 1 is an alkyl compound represented by ChemicalFormula 3:

wherein R₃ are the same or different protecting groups released by anacid.
 4. The pattern formation material of claim 1, further comprisingan acid generator for generating an acid through irradiation with light,wherein at least one R₁ of Chemical Formula 1 is an ether compoundrepresented by Chemical Formula 4:

wherein R₄ is a protecting group released by an acid.
 5. The patternformation material of claim 1, further comprising an acid generator forgenerating an acid through irradiation with light, wherein at least oneR₁ of Chemical Formula 1 is an ether compound represented by ChemicalFormula 5:

wherein R₅ is a protecting group released by an acid.
 6. A patternformation method comprising the steps of: forming a resist film byapplying, on a substrate, a pattern formation material containing a basepolymer including a siloxane compound represented by Chemical Formula 6:

wherein R₁ are the same or different compounds selected from the groupconsisting of an alkyl compound, an ester compound, an ether compound, asulfone compound, a sulfonyl compound and an aromatic compound;irradiating said resist film with exposing light of a wavelength of a 1nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 7. The pattern formation method of claim 6,wherein said pattern formation material further contains an acidgenerator for generating an acid through irradiation with light, and atleast one R₁ of Chemical Formula 6 is an alkyl compound represented byChemical Formula 7:

wherein R₂ is a protecting group released by an acid.
 8. The patternformation method of claim 6, wherein said pattern formation materialfurther contains an acid generator for generating an acid throughirradiation with light, and at least one R₁ of Chemical Formula 6 is analkyl compound represented by Chemical Formula 8:

wherein R₃ are the same or different protecting groups released by anacid.
 9. The pattern formation method of claim 6, wherein said patternformation material further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 6 is an ether compound represented by Chemical Formula 9:

wherein R₄ is a protecting group released by an acid.
 10. The patternformation method of claim 6, wherein said pattern formation materialfurther contains an acid generator for generating an acid throughirradiation with light, and at least one R₁, of Chemical Formula 6 is anether compound represented by Chemical Formula 10:

wherein R₅ is a protecting group released by an acid.
 11. The patternformation method of claim 6, wherein said exposing light is F₂ excimerlaser, Ar₂ excimer laser or soft-X rays.
 12. A pattern formation methodcomprising the steps of: forming an organic film from an organiccompound on a substrate; forming a resist film by applying, on saidorganic film, a pattern formation material containing a base polymerincluding a siloxane compound represented by Chemical Formula 11:

wherein R₁ are the same or different compounds selected from the groupconsisting of an alkyl compound, an ester compound, an ether compound, asulfone compound, a sulfonyl compound and an aromatic compound;irradiating said resist film with exposing light of a wavelength of a 1nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; forming a resist pattern by developing said resist film afterthe pattern exposure; and forming an organic film pattern by conducingdry development using oxygen plasma on said organic film with saidresist pattern used as a mask.
 13. The pattern formation method of claim12, wherein said pattern formation material further contains an acidgenerator for generating an acid through irradiation with light, and atleast one R₁ of Chemical Formula 11 is an alkyl compound represented byChemical Formula 12:

wherein R₂ is a protecting group released by an acid.
 14. The patternformation method of claim 12, wherein said pattern formation materialfurther contains an acid generator for generating an acid throughirradiation with light, and at least one R₁ of Chemical Formula 11 is analkyl compound represented by Chemical Formula 13:

wherein R₃ are the same or different protecting groups released by anacid.
 15. The pattern formation method of claim 12, wherein said patternformation material further contains an acid generator for generating anacid through irradiation with light, and at least one R₁ of ChemicalFormula 11 is an ether compound represented by Chemical Formula 14:

wherein R₄ is a protecting group released by an acid.
 16. The patternformation method of claim 12, wherein said pattern formation materialfurther contains an acid generator for generating an acid throughirradiation with light, and at least one R₁ of Chemical Formula 11 is anether compound represented by Chemical Formula 15:

wherein R₅ is a protecting group released by an acid.
 17. The patternformation method of claim 12, wherein said exposing light is F₂ excimerlaser, Ar₂ excimer laser or soft-X rays.